衬底温度对硅基热蒸发溴化亚铜纳米薄膜结构及光电性能的影响

    Effect of substrate temperature on the structural and optoelectronic properties of thermally evaporated CuBr nanofilms

    • 摘要: 采用热蒸发法沉积溴化亚铜(CuBr)纳米薄膜,系统研究了衬底温度对其光学和电学特性的影响,以评估其在光电子器件中的集成潜力。传统研究多将热蒸发CuBr薄膜用作光电子器件中的空穴传输层。然而,CuBr在约410 nm处存在尖锐的蓝光激子发射峰,该独特光致发光特性说明其可作为发光器件的发光层。所制备的CuBr薄膜具有多晶闪锌矿结构,表面光滑且形貌良好。值得注意的是,该薄膜在可见光区域展现出超过80%的高透射率,光致发光光谱(PL)表明,所制备的薄膜在412 nm处呈现显著的发光峰,与CuBr的本征发光特性一致。随着衬底温度升高,薄膜结晶度提高,PL强度进一步增强,同时电阻率降低。上述结果表明,通过热蒸发法制备的CuBr纳米薄膜,为后续CuBr基电致发光器件的构建提供了材料与工艺基础。

       

      Abstract: CuBr nanofilms were deposited via thermal evaporation, and the influence of substrate temperature on their optical and electrical properties was systematically investigated to evaluate their potential for integration into optoelectronic devices. Current research on thermally evaporated CuBr thin films has primarily employed them as hole transport layers in optoelectronic devices. However, CuBr exhibits a blue excitonic emission peak at approximately 410 nm, a unique photoluminescence characteristic that suggests its viability as an emissive layer for light-emitting devices. The as-deposited CuBr thin films prepared in this work exhibit a polycrystalline zinc-blende structure with smooth surface morphology and good uniformity. Notably, the films show a high transmittance exceeding 80% in the visible spectral range, Photoluminescence (PL) spectra reveal a prominent emission peak at approximately 412 nm for the as-deposited films, consistent with the intrinsic emission features of CuBr. With increasing substrate temperature, the crystallinity of the films is improved, accompanied by enhanced PL intensity and reduced resistivity. These results demonstrate that CuBr nanofilms deposited by thermal evaporation provide a material and processing foundation for the subsequent construction of CuBr-based electrically driven light-emitting devices.

       

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