基于铪制备HfO2薄膜的工艺优化及光学特性

    Process optimization and optical property of HfO2 thin films prepared with hafnium material

    • 摘要: HfO2薄膜的光学性能受制备工艺因素的影响很大,以金属铪为原料、氧气为反应气体,在石英玻璃基底上使用电子束热蒸发技术沉积单层HfO2薄膜;通过正交实验研究蒸发束流、工作真空度、沉积温度对HfO2薄膜的光学特性和激光损伤阈值的影响;采用分光光度计测量单层HfO2薄膜的光谱透射率,采用椭偏仪测量其折射率和消光系数,采用激光损伤测试系统测量激光损伤阈值。研究发现:蒸发束流是影响HfO2薄膜光学特性和激光损伤阈值的最主要因素,工作真空度是次要因素,沉积温度对其影响不显著。通过工艺优化获得了影响HfO2薄膜光学特性的最佳工艺参数,即蒸发束流为170 mA、工作真空度为1.8×10−2 Pa、沉积温度为160 ℃。在最佳工艺参数下制备的HfO2薄膜在1 064 nm波长处的折射率为1.8896,消光系数为3.07×10−5,在1 064 nm单脉冲能量下的激光损伤阈值为23.1 J·cm−2

       

      Abstract: The optical properties of HfO2 thin films are greatly influenced by the preparation process factors. Using hafnium metal as the raw material and oxygen as the reaction gas, the monolayer HfO2 thin films were deposited on quartz glass substrates by electron-beam thermal evaporation technology. The effects of evaporation current, working pressure and deposition temperature on its optical properties and laser-induced damage threshold were studied through orthogonal experiments. The spectral transmittance of monolayer HfO2 thin films were measured by a spectrophotometer, its refractive index and extinction coefficient were measured by an ellipsometry, and its laser-induced damage threshold was measured by laser-induced damage test system. The research finds out that the evaporation beam is the most important factor affecting the optical properties and laser-induced damage threshold of monolayer HfO2 thin films, the working vacuity is the secondary factor, and the influence of deposition temperature is not significant. The optimal process parameters affecting the optical properties of HfO2 thin films were obtained through the process optimization, The evaporation beam is 170 mA, the working pressure is 1.8×10−2 Pa, and the deposition temperature is 160 ℃. The prepared HfO2 thin films at this process parameters have a refractive index of 1.889 6 at 1 064 nm, an extinction coefficient of 3.07×10−5 at 1 064 nm, and a laser-induced damage threshold of 23.1 J·cm−2 at a single pulse energy of 1 064 nm.

       

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