Abstract: With the development of optoelectronic technology, the importance of color charge coupled device (CCD) detectors in various applications is continuously increasing. Therefore, analysis of damage properties under laser irradiation is key to enhancing their reliability. A nanosecond laser with a wavelength of 532 nm, a pulse width of 10 ns, and a repetition frequency of 1 Hz was used to experimentally study the color CCD detectors, and the damage properties were analyzed under varying peak power densities. The microstructure and depth of the damaged regions on the color CCD detectors were observed using metallographic microscopy, scanning electron microscopy (SEM), and a 3D surface profiler, thereby determining the internal damage locations. The results indicate at a power density of 2.675×10⁵ W/cm², the damage is mainly concentrated in the color separation filter layer, leading to the appearance of white spot damage. When the power density increases to 3.534×10⁶ W/cm², the aluminum light-shielding film melts, causing white line damage. Further increasing to 4.526×10⁶ W/cm², the damage penetrates into the N-type photosensitive region, leading to gray-white screen damage. At the maximum power density of 5.926×10⁶ W/cm², the N-type silicon substrate is damaged, causing the color CCD detector to completely fail.