基于短波红外偏振成像的集成电路芯片污染缺陷检测

Detection of pollution defects in integrated circuit chips using short-wave infrared polarization imaging

  • 摘要: 针对集成电路芯片污染缺陷高速、高精度的检测需求,设计并研制了一种基于短波红外显微成像技术与偏振测量技术相结合的高精度短波红外偏振显微成像系统。检测光源透射穿过样品,样品偏振光经过显微镜收集,入射到由波片和检偏器构成的偏振分析装置,从而完成样品偏振图像测量。利用偏振图像融合技术将测量得到的图像进行融合,完成样品偏振图像特征提取,从而实现对集成电路芯片污染的缺陷检测。采用Op-Amp集成芯片对芯片的边缘和中心进行了测试实验。实验结果显示,本系统所测试的缺陷特征清晰、数量完整,能够提供重要依据,确保了集成电路芯片污染缺陷检测的准确性。

     

    Abstract: Aiming at the demands of high-speed and high-precision detection of pollution defects in integrated circuit chips, a high-precision and short-wave infrared polarization micro-imaging system based on the combination of short-wave infrared micro-imaging technology and polarization measurement technology was designed and developed. The detection light source transmitted through the sample, and the polarized light of the sample was collected by the microscope and incident on the polarization analysis device composed of wave plate and polarization detector to complete the measurement of the polarized image of the sample. Then the polarized image fusion technology was used to fuse the measured images to complete the feature extraction of the polarized image of the sample, thus achieving defect detection of integrated circuit chip contamination. The edge and center of the chip were tested with Op-Amp integrated chip. The results show that the defect characteristics tested by this system are clear and the quantity is complete, which can provide important basis to ensure the accuracy of integrated circuit chip contamination defect detection.

     

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